翻訳と辞書 Words near each other ・ Hybrid masonry ・ Hybrid mass spectrometer ・ Hybrid material ・ Hybrid Memory Cube ・ Hybrid models of forest production ・ Hybrid Monte Carlo ・ Hybrid moored balloon ・ Hybrid name ・ Hybrid neural network ・ Hybrid Noisebloom ・ Hybrid offence ・ Hybrid oncocytoma/chromophobe renal cell carcinoma ・ Hybrid open access journal ・ Hybrid operating room ・ Hybrid organization ・ Hybrid physical-chemical vapor deposition ・ Hybrid picking ・ Hybrid plasmid ・ Hybrid plasmonic waveguide ・ Hybrid positioning system ・ Hybrid power ・ Hybrid Present Y4K ・ Hybrid Rainbow ・ Hybrid reactor ・ Hybrid Remixed ・ Hybrid renewable energy system ・ Hybrid rice ・ Hybrid rocket ・ Hybrid routing ・ Hybrid SaaS Dictionary Lists mini英和辞書 mini和英辞書 Webster 1913 Latin-English FOLDOC Wikipedia English ウィキペディア

翻訳と辞書　辞書検索 [ 開発暫定版 ] スポンサード リンク Hybrid physical-chemical vapor deposition ： ウィキペディア英語版 Hybrid physical-chemical vapor deposition Hybrid physical-chemical vapor deposition (HPCVD) is a thin-film deposition technique, that combines physical vapor deposition (PVD) with chemical vapor deposition (CVD). For the instance of magnesium diboride (MgB2) thin film growth, HPCVD process uses diborane (B2H6) as the boron precursor gas, but unlike conventional CVD, which only uses gaseous sources, heated bulk magnesium pellets (99.95% pure) are used as the Mg source in the deposition process. Since the process involves chemical decomposition of precursor gas and physical evaporation of metal bulk, it is named as hybrid physical-chemical vapor deposition. ==System configuration== The HPCVD system usually consists of a water-cooled reactor chamber, gas inlet and flow control system, pressure maintenance system, temperature control system and gas exhaust and cleaning system. The main difference between HPCVD and other CVD systems is in the heating unit. For HPCVD, both substrate and solid metal source are heated up by the heating module. The conventional HPCVD system usually has only one heater. The substrate and solid metal source sit on the same susceptor and are heated up inductively or resistively at the same time. Above certain temperature, the bulk metal source melts and generates a high vapor pressure in the vicinity of the substrate. Then the precursor gas is introduced into the chamber and decomposes around the substrate at high temperature. The atoms from the decomposed precursor gas react with the metal vapor, forming thin films on the substrate. The deposition ends when the precursor gas is switched off. The main drawback of single heater setup is the metal source temperature and the substrate temperature cannot be controlled independently. Whenever the substrate temperature is changed, the metal vapor pressure changes as well, limiting the ranges of the growth parameters. In the two-heater HPCVD arrangement, the metal source and substrate are heated up by two separate heaters. Thus it can provide more flexible control of growth parameters. 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Hybrid physical-chemical vapor deposition」の詳細全文を読む スポンサード リンク 翻訳と辞書 : 翻訳のためのインターネットリソース Copyright(C) kotoba.ne.jp 1997-2016. All Rights Reserved.